MMD80R900QZ - MagnaChip

MMD80R900QZ N-channel MOSFET

MMD80R900QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj.

Features

 Low Power Loss by High Speed Switching and Low On-Resistance
 Excellent ESD robustness
 100% Avalanche Tested
 Green Package
  – Pb Free Plating, Halogen Free
 Applications
 PFC Power Supply Stages
 Switching Applications
 Adapter
 Ordering Information Order Code Marking Temp. Range MMD80R900QZRH 80R900QZ -55 ~ 150 oC Jun. 2021. Revision 1.3 1 Package TO-252(2L) Packing Reel RoHS Status Compliant Magnachip Semiconductor Ltd. MMD80R900QZ Datasheet
 Absolute Maximum Rating (Tc=25 oC unless otherwise specified) Parameter Drain
  – Source voltage Gate
  – Source voltage Continuo.