MMD80R900P - INCHANGE

MMD80R900P N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMD80R900P ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Motor contorl ·DC-DC conventers ·ABSOLUTE.

Features

·With To-252(DPAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·Motor contorl
·DC-DC conventers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 6 3.8 18 PD Total Dissipation @TC=25℃ 75.8 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 .