MMBT2484LT1 - Motorola

MMBT2484LT1 Low Noise Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2484LT1/D Low Noise Transistor NPN Silicon 1 BASE COLLECTOR 3 MMBT2484LT1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 60 60 6.0 50 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2.

Features

(IC = 10 mAdc, IB = 0) Collector
  – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR
  – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 60 V(BR)CBO 60 V(BR)EBO 5.0 ICBO — — IEBO — 10 10 10 nAdc µAdc nAdc — — Vdc — Vdc Vdc   0.062 in.   0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBT24.