MMBT2131T1G General Purpose Transistors PNP Bipolar Junction Transistor NOTE: Voltage and Current are negative for the PNP Transistor. Features • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Cu.
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 1)
VCEO VCBO VEBO
IC IB PD PD RqJA
30
V
40
V
5.0
V
700
mA
350
mA
342
mW
178
mW
366
°C/W
Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 2)
PD PD RqJA
665
mW
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBT2131T1G |
ON Semiconductor |
PNP Transistors | |
2 | MMBT2131T3 |
ON |
General Purpose Transistors | |
3 | MMBT2132T1 |
ON |
General Purpose Transistors | |
4 | MMBT2132T1 |
Motorola |
(MMBT2132T1 / MMBT2132T3) General Purpose Transistors | |
5 | MMBT2132T3 |
ON |
General Purpose Transistors | |
6 | MMBT2132T3 |
Motorola |
(MMBT2132T1 / MMBT2132T3) General Purpose Transistors | |
7 | MMBT200 |
Fairchild |
PNP General Purpose Amplifier | |
8 | MMBT200A |
Fairchild |
PNP General Purpose Amplifier | |
9 | MMBT2222 |
MIC |
NPN EPITAXIAL SILICON TRANSISTOR | |
10 | MMBT2222 |
TIPTEK |
GENERAL PURPOSE NPN TRANSISTORS | |
11 | MMBT2222 |
Samsung |
NPN TRANSISTOR | |
12 | MMBT2222 |
Diotec |
Surface mount Si-Epitaxial PlanarTransistors |