MMBT2484LT1 |
Part Number | MMBT2484LT1 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2484LT1/D Low Noise Transistor NPN Silicon 1 BASE COLLECTOR 3 MMBT2484LT1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Coll... |
Features |
(IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 60 V(BR)CBO 60 V(BR)EBO 5.0 ICBO — — IEBO — 10 10 10 nAdc µAdc nAdc — — Vdc — Vdc Vdc 0.062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBT24... |
Document |
MMBT2484LT1 Data Sheet
PDF 291.96KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MMBT2484LT1 |
Leshan Radio Company |
Low Noise Transistor(NPN Silicon) | |
2 | MMBT2484 |
Fairchild |
NPN General Purpose Amplifier | |
3 | MMBT200 |
Fairchild |
PNP General Purpose Amplifier | |
4 | MMBT200A |
Fairchild |
PNP General Purpose Amplifier | |
5 | MMBT2131T1 |
ON Semiconductor |
PNP Transistors |