MMBT2222AWT1G - ON Semiconductor

MMBT2222AWT1G General Purpose Transistor

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Uniq.

Features

 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board TA = 25C PD 150 mW Thermal Resistance, Junction−to−Ambient RqJA 833 C/W Junction a.