Green compound 3 Version:F1703 PD, Power Dissipation (mW) CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1Max Power Dissipation VS. Ambient Temperature 400 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA , Ambient Temperature (°C) Capacitance (pF) MMBT2222A Taiwan Semiconductor Fig.2 Typical Capacitance 100 Cibo 10 Cobo .
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOT-23
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Matte tin plated leads, solderable per J-STD-002
● Me.
MMBT2222A Features • Ideally Suited For Automatic Instertion • Halogen Free. "Green" Device (Note 1) • Moisture Sensiti.
NPN EPITAXIAL SILICON TRANSISTOR MMBT2222/ALT1 GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dis.
NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A .
Production specification NPN General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary P.
• The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. • High .
MMBT2222/MMBT2222A GENERAL PURPOSE NPN TRANSISTORS FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION .
base emitter collector DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A. MAR.
UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This devic.
Elektronische Bauelemente MMBT2222A NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of "-C" spe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBT2222 |
MIC |
NPN EPITAXIAL SILICON TRANSISTOR | |
2 | MMBT2222 |
TIPTEK |
GENERAL PURPOSE NPN TRANSISTORS | |
3 | MMBT2222 |
Samsung |
NPN TRANSISTOR | |
4 | MMBT2222 |
Diotec |
Surface mount Si-Epitaxial PlanarTransistors | |
5 | MMBT2222 |
HOTTECH |
SWITCHING TRANSISTOR | |
6 | MMBT2222 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
7 | MMBT2222 |
ART CHIP |
NPN GENERAL PURPOSE AMPLIFIER | |
8 | MMBT2222 |
Weitron Technology |
NPN Transistors | |
9 | MMBT2222 |
Fairchild |
NPN Amplifier | |
10 | MMBT2222 |
Galaxy Semi-Conductor |
NPN General Purpose Amplifier | |
11 | MMBT2222 |
SEMTECH |
NPN Transistor | |
12 | MMBT2222 |
JinYu |
NPN Transistor |