MMBT2222AWT1 - Motorola

MMBT2222AWT1 General Purpose Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Order this document by MMBT2222AWT1/D General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. COLLECTOR 3 MMBT2222AWT1 Motorola Pre.

Features

CHARACTERISTICS Collector
  – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector
  – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 — — — — — 20 10 Vdc Vdc Vdc nAdc nAdc v 300 ms, Duty Cycle v 2.0%. Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Mot.