MMBR571LT1 - Motorola

MMBR571LT1 NPN Silicon High-Frequency Transistors

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR571LT1/D The RF Line NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior qu.

Features

MAXIMUM RATINGS Rating Collector
  –Emitter Voltage Collector
  –Base Voltage Emitter
  –Base Voltage Collector Current — Continuous Total Device Dissipation @ Tcase = 75°C MMBR571LT1, MRF5711LT1 Derate linearly above Tcase = 75°C @ Total Device Dissipation (1) @ TC = 75°C Derate above 75°C Operating and Storage Temperature MRF571 Tstg Symbol VCEO VCBO VEBO IC PD(max) 0.33 4.44 PD 0.58 7.73
  – 55 to +150 W mW/°C Watts mW/°C °C Value 10 20 3.0 80 Unit Vdc Vdc Vdc mA CASE 317
  –01, STYLE 2 MACRO
  –X MRF571 CASE 318A
  –05, STYLE 1 SOT
  –143 LOW PROFILE MRF5711LT1 THERMAL CHARACTERISTICS Rating Thermal Resistan.