MMBR571L - Inchange Semiconductor

MMBR571L Silicon NPN RF Transistor

·Low Noise ·High Current-Gain Bandwidth Product fT = 8.0 GHz TYP. @ IC= 50 mA ·High Gain GNF = 16.5 dB TYP. @ IC= 10mA, f = 0.5 GHz APPLICATIONS ·Designed for low noise , wide dynamic range front-end amplifiers and low-noise VCO’S. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Vol.

Features

ase Breakdown Voltage IC= 0.1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA ; IC= 0 20 3 V V ICBO Collector Cutoff Current VCB= 8V; IE= 0 10 μA hFE DC Current Gain COB Output Capacitance IC= 30mA ; VCE= 5V IE= 0 ; VCB= 10V; f= 1MHz 50 300 0.7 1.0 pF fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 5V; f= 1GHz 8 GHz G NF Gain@Noise Figure G NF Gain@Noise Figure NF Noise Figure IC= 10mA ; VCE= 5V; f= 0.5GHz IC= 10mA ; VCE= 5V; f= 1GHz IC= 10mA ; VCE= 5V; f= 0.5GHz 16.5 10.5 2.0 dB dB dB NF Noise Figure IC= 10mA ; VCE= 5V; f= 1GHz 2.6 dB isc website：www.is.