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MMBR2857 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) RF TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO v EBO 'C THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ta = 25°C Derate above 25°C Symbol PD Storage Temperature .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMBR2857L |
Motorola |
RF Amplifier Transistor |
|
| 2 | MMBR2060 |
Motorola |
RF AMPLIFIER TRANSISTOR |
|
| 3 | MMBR4957 |
Motorola |
RF Amplifier Transistor |
|
| 4 | MMBR4957LT1 |
Motorola |
PNP Silicon High-Frequency Transistor |
|
| 5 | MMBR4957LT3 |
Motorola |
PNP Silicon High-Frequency Transistor |
|
| 6 | MMBR5031 |
Motorola |
RF Amplifier Transistor |
|
| 7 | MMBR5031LT1 |
Motorola |
NPN Silicon High-Frequency Transistor |
|
| 8 | MMBR5179 |
Samsung |
RF AMPLIFIER TRANSISTOR |
|
| 9 | MMBR5179 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 10 | MMBR5179 |
Motorola |
RF Amplifier Transistor |
|
| 11 | MMBR5179LT1 |
Motorola |
RF AMPLIFIER TRANSISTOR NPN SILICON |
|
| 12 | MMBR5179LT1 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|