MMBR4957LT3 - Motorola

MMBR4957LT3 PNP Silicon High-Frequency Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR4957LT1/D The RF Line PNP Silicon High-Frequency Transistor . . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount components. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF.

Features

nce Junction to Case
* Symbol Tstg RθJC Max
  – 55 to +150 270 Unit °C °C/W CASE 318
  –07, STYLE 6 SOT
  –23 LOW PROFILE (TO
  –236AA/AB)
* Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. DEVICE MARKING MMBR4957LT1, T3 = 7F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC =
  –1.0 mAdc, IB = 0) Collector
  –Base Breakdown Voltage (IC =
  –100 µAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE =
  –100 µAdc, IC = 0) Collector Cutoff Current (VCB =
  –10 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO
  – 3.