MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR4957LT1/D The RF Line PNP Silicon High-Frequency Transistor . . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount components. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF.
nce Junction to Case
* Symbol Tstg RθJC Max
– 55 to +150 270 Unit °C °C/W CASE 318
–07, STYLE 6 SOT
–23 LOW PROFILE (TO
–236AA/AB)
* Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
DEVICE MARKING
MMBR4957LT1, T3 = 7F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC =
–1.0 mAdc, IB = 0) Collector
–Base Breakdown Voltage (IC =
–100 µAdc, IE = 0) Emitter
–Base Breakdown Voltage (IE =
–100 µAdc, IC = 0) Collector Cutoff Current (VCB =
–10 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO
– 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBR4957LT3 |
Motorola |
PNP Silicon High-Frequency Transistor | |
2 | MMBR4957 |
Motorola |
RF Amplifier Transistor | |
3 | MMBR2060 |
Motorola |
RF AMPLIFIER TRANSISTOR | |
4 | MMBR2857 |
Motorola |
NPN SILICON RF TRANSISTOR | |
5 | MMBR2857L |
Motorola |
RF Amplifier Transistor | |
6 | MMBR5031 |
Motorola |
RF Amplifier Transistor | |
7 | MMBR5031LT1 |
Motorola |
NPN Silicon High-Frequency Transistor | |
8 | MMBR5179 |
Samsung |
RF AMPLIFIER TRANSISTOR | |
9 | MMBR5179 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
10 | MMBR5179 |
Motorola |
RF Amplifier Transistor | |
11 | MMBR5179LT1 |
Motorola |
RF AMPLIFIER TRANSISTOR NPN SILICON | |
12 | MMBR5179LT1 |
Microsemi |
RF & MICROWAVE TRANSISTORS |