MMBF170LT1 - Motorola

MMBF170LT1 TMOS FET Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF170LT1/D TMOS FET Transistor N–Channel ® 1 GATE DRAIN 3 MMBF170LT1 2 SOURCE 3 1 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 ms) Drain Current – Continuous Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 .

Features

dc ON CHARACTERISTICS (2) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static Drain
  –Source On
  –Resistance (VGS = 10 Vdc, ID = 200 mA) On
  –State Drain Current (VDS = 25 Vdc, VGS = 0) VGS(th) rDS(on) ID(off) 0.8 — — 3.0 5.0 0.5 Vdc W mA pF DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss — 60 SWITCHING CHARACTERISTICS (2) Turn
  –On Delay Time Turn
  –Off Delay Time (VDD = 25 Vdc, ( , ID = 500 mA, , Rgen = 50 W) Figure 1 td(on) td(off) — — 10 10 ns 1. FR
  – 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle   v v 2.0%. TMOS is a registe.