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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF0201N/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power man.
TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Thermal Resistance — Junction
–to
–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg RθJA TL Value 20 ± 20 300 240 750 225
– 55 to 150 625 260 Unit Vdc Vdc mAdc
mW °C °C/W °C
DEVICE MARKING
N1 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF0201NLT1 MMBF0201NLT3 Reel Size 7″ 13″ Tap.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMBF0201N |
Motorola |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
|
| 2 | MMBF0201NL |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | MMBF0201NLT1 |
Motorola |
TMOS Single N-Channel FET |
|
| 4 | MMBF0201NLT1 |
ON Semiconductor |
Power MOSFET |
|
| 5 | MMBF0201NLT1G |
ON Semiconductor |
Power MOSFET |
|
| 6 | MMBF0202PLT1 |
ON Semiconductor |
Power MOSFET |
|
| 7 | MMBF0202PLT1 |
Motorola |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
|
| 8 | MMBF170 |
ON Semiconductor |
N-channel MOSFET |
|
| 9 | MMBF170 |
Diodes Incorporated |
N-Channel MOSFET |
|
| 10 | MMBF170 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 11 | MMBF170L |
ON Semiconductor |
N-Channel MOSFET |
|
| 12 | MMBF170LT1 |
Motorola |
TMOS FET Transistor |
|