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MMBF170LT1 |
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| Part Number | MMBF170LT1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF170LT1/D TMOS FET Transistor N–Channel ® 1 GATE DRAIN 3 MMBF170LT1 2 SOURCE 3 1 2 MAXIMUM RATINGS Rating Drain–Source Voltage D... |
| Features |
dc
ON CHARACTERISTICS (2)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static Drain –Source On –Resistance (VGS = 10 Vdc, ID = 200 mA) On –State Drain Current (VDS = 25 Vdc, VGS = 0) VGS(th) rDS(on) ID(off) 0.8 — — 3.0 5.0 0.5 Vdc W mA pF DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss — 60 SWITCHING CHARACTERISTICS (2) Turn –On Delay Time Turn –Off Delay Time (VDD = 25 Vdc, ( , ID = 500 mA, , Rgen = 50 W) Figure 1 td(on) td(off) — — 10 10 ns 1. FR – 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle v v 2.0%. TMOS is a registe... |
| Document |
 MMBF170LT1 Data Sheet
PDF 98.04KB |
| Distributor | Stock | Price | Buy |
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