MMBD352WT1 - Motorola

MMBD352WT1 Dual Schottky Barrier Diode

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ.

Features

M5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR
  – 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. VF IR — — C — 0.25 10 1.0 pF — 0.60 V mA Thermal Clad is a trademark of the Bergquist Company Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MMBD352WT1 TYPICAL CHARACTERISTICS 100 I F, FORWARD CURRENT (mA) 1.0 10 TA =
  –40°C .