MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (T.
SOT
– 23 (TO
– 236AB)
1 CATHODE
3 CATHODE/ANODE
2 ANODE
MMBD353LT1 CASE 318
– 08, STYLE 19 SOT
– 23 (TO
– 236AB)
DEVICE MARKING
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symb ol Min Max Unit
3 CATHODE
ANODE 1 2 ANODE
MMBD354LT1 CASE 318
– 08, STYLE 9 SOT
– 23 (TO
– 236AB)
OFF CHARACTERISTICS
Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR
– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0..
www.DataSheet4U.com MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are desi.
LESHAN RADIO COMPANY, LTD. Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer application.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBD352LT1G |
ON Semiconductor |
Dual Hot Carrier Mixer Diodes | |
2 | MMBD352 |
Pan Jit International |
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE | |
3 | MMBD352 |
Won-Top Electronics |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
4 | MMBD352 |
LGE |
Dual Hot Carrier Mixer Diodes | |
5 | MMBD352 |
GME |
Dual Hot Carrier Mixer Diodes | |
6 | MMBD352 |
ON |
Dual Hot Carrier Mixer Diodes | |
7 | MMBD352 |
Motorola |
DUAL HOT CARRIER MIXER DIODE | |
8 | MMBD352W |
PAN JIT |
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE | |
9 | MMBD352W |
WON-TOP |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
10 | MMBD352W |
GME |
Schottky Barrier Diode | |
11 | MMBD352WT1 |
ON |
Dual Shottky Barrier Diode | |
12 | MMBD352WT1 |
Leshan Radio Company |
Dual Schottky Barrier Diode |