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MMBD352WT1 |
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| Part Number | MMBD352WT1 |
| Manufacturer | Motorola |
| Description | MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are su... |
| Features |
M5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR – 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. VF IR — — C — 0.25 10 1.0 pF — 0.60 V mA Thermal Clad is a trademark of the Bergquist Company Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MMBD352WT1 TYPICAL CHARACTERISTICS 100 I F, FORWARD CURRENT (mA) 1.0 10 TA = –40°C ... |
| Document |
 MMBD352WT1 Data Sheet
PDF 80.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBD352WT1 |
ON |
Dual Shottky Barrier Diode |
|
| 2 | MMBD352WT1 |
Leshan Radio Company |
Dual Schottky Barrier Diode |
|
| 3 | MMBD352WT1G |
ON Semiconductor |
Dual Schottky Barrier Diode |
|
| 4 | MMBD352W |
PAN JIT |
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
|
| 5 | MMBD352W |
WON-TOP |
SURFACE MOUNT SCHOTTKY BARRIER DIODE |
|