MJE18004 - INCHANGE

MJE18004 NPN Transistor

·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base.

Features

icon NPN Power Transistor MJE18004 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0 VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC= 1 A ;IB= 0.1A TC=125℃ IC= 2A ;IB= 0.4 A TC=125℃ VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A 450 V 0.5 0.6 V 0.45 0.8 V 0.75 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2A; IB= 0..