MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004D2/D MJE18004D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics .
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
• Integrated Collector
–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads It’s characteristics make it also suitable for PFC application.
POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJE18004 |
INCHANGE |
NPN Transistor | |
2 | MJE18004 |
Motorola |
POWER TRANSISTOR | |
3 | MJE18004 |
ON |
Switch-mode NPN Bipolar Power Transistor | |
4 | MJE18004 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | MJE18004G |
INCHANGE |
NPN Transistor | |
6 | MJE18002 |
INCHANGE |
NPN Transistor | |
7 | MJE18002 |
Motorola |
POWER TRANSISTOR | |
8 | MJE18002 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | MJE18002D2 |
Motorola |
POWER TRANSISTORS | |
10 | MJE18006 |
INCHANGE |
NPN Transistor | |
11 | MJE18006 |
Motorola |
POWER TRANSISTOR | |
12 | MJE18006 |
SavantIC |
SILICON POWER TRANSISTOR |