MJE18004 |
Part Number | MJE18004 |
Manufacturer | INCHANGE |
Description | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 22... |
Features |
icon NPN Power Transistor
MJE18004
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0
VCE(sat)-1 VCE(sat)-2
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
IC= 1 A ;IB= 0.1A TC=125℃
IC= 2A ;IB= 0.4 A TC=125℃
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A
450
V
0.5 0.6
V
0.45 0.8
V
0.75 V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
1.1
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 2A; IB= 0.... |
Document |
MJE18004 Data Sheet
PDF 212.24KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJE18002 |
INCHANGE |
NPN Transistor | |
2 | MJE18002 |
Motorola |
POWER TRANSISTOR | |
3 | MJE18002 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | MJE18002D2 |
Motorola |
POWER TRANSISTORS | |
5 | MJE18004 |
Motorola |
POWER TRANSISTOR |