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·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI.
L PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat)-1 Collector-EmitterSaturation Voltage VCE(sat)-2 Collector-EmitterSaturation Voltage VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain CONDITIONS IC= 30mA; IB= 0 IC= 5A ;IB= 10mA IC= 10A ;IB= 20mA IC= 5A ;IB= 10mA VCE=Rated VCEO; VBE= 0 VEB= 7.0V; IC= 0 IC= 5A ; VCE= 5V MJD44E3 MIN MAX UNIT 80 V 1.5 V 1.5 V 2.5 V 10 μA 1.0 μA 1000 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time with.
MJD44E3 - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44E3/D MJD44E3* Darlington Power Transistor DPAK For .
MJD44E3 - ON Semiconductor
MJD44E3, NJVMJD44E3T4G Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose po.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD44E3-1 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 2 | MJD44E3T4 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 3 | MJD44 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 4 | MJD44 |
Fairchild |
General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications |
|
| 5 | MJD44 |
ST Microelectronics |
COMPLEMENTARY SILICON PNP TRANSISTORS |
|
| 6 | MJD44H11 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | MJD44H11 |
Kexin |
Complementary Power Transistors |
|
| 8 | MJD44H11 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 9 | MJD44H11 |
ST Microelectronics |
Complementary power transistors |
|
| 10 | MJD44H11 |
Fairchild |
NPN Epitaxial Silicon Transistor |
|
| 11 | MJD44H11 |
ON Semiconductor |
Complementary Power Transistors |
|
| 12 | MJD44H11 |
nexperia |
8A NPN high power bipolar transistor |
|