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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44E3/D MJD44E3* Darlington Power Transistor DPAK For Surface Mount Application • • • • • • • . . . for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. Lead Formed for Surface Mount Application in Plast.
ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ
MAXIMUM RATINGS
Rating Symbol VCEO VEB IC Value 80 7 Unit Vdc Vdc Adc Collector
–Emitter Voltage Emitter
–Base Voltage Collector Current — Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 10 PD 20 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJD44E3 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | MJD44E3 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 3 | MJD44E3 |
ON Semiconductor |
Darlington Power Transistor |
|
| 4 | MJD44E3T4 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 5 | MJD44 |
Motorola |
NPN DARLINGTON SILICON POWER TRANSISTOR |
|
| 6 | MJD44 |
Fairchild |
General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications |
|
| 7 | MJD44 |
ST Microelectronics |
COMPLEMENTARY SILICON PNP TRANSISTORS |
|
| 8 | MJD44H11 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | MJD44H11 |
Kexin |
Complementary Power Transistors |
|
| 10 | MJD44H11 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 11 | MJD44H11 |
ST Microelectronics |
Complementary power transistors |
|
| 12 | MJD44H11 |
Fairchild |
NPN Epitaxial Silicon Transistor |
|