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MJD31B |
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| Part Number | MJD31B |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. DPAK TO-252 (Suffix ”T4”) INTE... |
| Features |
s the values are intented negative.
May 1999
1/5
MJD31B/31C - MJD32B/32C
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I CEO I EBO V CEO(sus) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitt er Voltage DC Current Gain Dynamic Current G ain Test Cond ition s V CE = Max... |
| Document |
 MJD31B Data Sheet
PDF 65.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD31 |
Kexin |
Complementary Power Transistors |
|
| 2 | MJD31 |
CDIL |
COMPLEMENTARY PLASTIC POWER TRANSISTORS |
|
| 3 | MJD31 |
Fairchild |
NPN Epitaxial Silicon Transistor |
|
| 4 | MJD31 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 5 | MJD31 |
ON Semiconductor |
(MJD31 / MJD32) Complementary Power Transistors |
|