Intelligent Power Devices (IPDs) MIP301 Silicon MOS IC s Features q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method) unit: mm 0.6±0.3 0.4±0.25 1 2 3 4 8 5.0±0.3 1.5±0.2 4.2±0.3 6.5±0.3 7 6 5 s Applications 1.27 0.1±0.1 0.3 q IPD for DC/DC converter s Absol.
q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method) unit: mm 0.6±0.3 0.4±0.25 1 2 3 4 8 5.0±0.3 1.5±0.2 4.2±0.3 6.5±0.3 7 6 5 s Applications 1.27 0.1±0.1 0.3 q IPD for DC/DC converter s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Drain voltage Control voltage Input voltage Output current Control current Channel temperature Storage temperature Symbol VD VC VIN ID IC Tch Tstg Ratings 90 8 30 1.1 0.1 150 −55 to +150 Unit V V V A A °C °C 1: VIN 5: Drain 2: Source 6: Source 3: Source 7: Sou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MIP3530MS |
Panasonic |
Silicon MOS FET | |
2 | MIP3550MS |
Panasonic |
Silicon MOS FET | |
3 | MIP3550MTSCF |
Panasonic |
Silicon MOSFET type Integrated Circuit | |
4 | MIP3E30MP |
Panasonic |
Silicon MOS type integrated circuit | |
5 | MIP3E30MY |
Panasonic |
Silicon MOSFET | |
6 | MIP3E3SMY |
Panasonic |
Silicon MOS type integrated circuit | |
7 | MIP3E40MY |
Panasonic |
Silicon MOSFET | |
8 | MIP3E50MY |
Panasonic |
Intelligent Power Device | |
9 | MIP3E70MY |
Panasonic |
Silicon MOS type integrated circuit | |
10 | MIP3J20MS |
Panasonic |
Silicon MOSFET type Integrated Circuit | |
11 | MIP3J2VMSSCF |
Panasonic |
Silicon MOSFET | |
12 | MIP0040MFL |
Panasonic |
Silicon MOSFET |