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MIP301 |
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| Part Number | MIP301 |
| Manufacturer | Panasonic Semiconductor |
| Description | Intelligent Power Devices (IPDs) MIP301 Silicon MOS IC s Features q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input ... |
| Features |
q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method)
unit: mm
0.6±0.3 0.4±0.25 1 2 3 4
8 5.0±0.3 1.5±0.2 4.2±0.3 6.5±0.3 7 6 5
s Applications
1.27 0.1±0.1 0.3
q IPD for DC/DC converter
s Absolute Maximum Ratings (Ta = 25 ± 3°C)
Parameter Drain voltage Control voltage Input voltage Output current Control current Channel temperature Storage temperature Symbol VD VC VIN ID IC Tch Tstg Ratings 90 8 30 1.1 0.1 150 −55 to +150 Unit V V V A A °C °C
1: VIN 5: Drain 2: Source 6: Source 3: Source 7: Sou... |
| Document |
 MIP301 Data Sheet
PDF 33.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MIP3530MS |
Panasonic |
Silicon MOS FET |
|
| 2 | MIP3550MS |
Panasonic |
Silicon MOS FET |
|
| 3 | MIP3550MTSCF |
Panasonic |
Silicon MOSFET type Integrated Circuit |
|
| 4 | MIP3E30MP |
Panasonic |
Silicon MOS type integrated circuit |
|
| 5 | MIP3E30MY |
Panasonic |
Silicon MOSFET |
|