MIP3E30MP - Panasonic

MIP3E30MP Silicon MOS type integrated circuit

(IPD) MIP3E30MP MOS ■ • (MIP2ExD • • 50% ) 8 9.4±0.3 Unit : mm +0 0.25 -0.05 .10 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 ■ • 1 2 3 4 2.54±0.25 ■ VD VC ID IDP IC Tch Tstg 700 8 0.88 1.7 0.1 150 −55 ∼ +150 V V A A A °C °C 0.5±0.1 1.2±0.25 (2,3,7PIN) 1 : Source 2 : Source 3 : Source (1,4,5,8PIN) 4 : Control 5 : Drain 7 : Source 8 : Source DIP8-A1(CF) Pack.

Features

V V V % Hz VC = 0 V, VD = 40 V VC = 5 V, VD = 40 V VD = 5 V VD = 5 V −3.6 −2.0 5.4 −2.5 −1.0 5.8 10 −1.0 −0.4 6.3 mA V mV V ∆VC(CNT) VD(MIN) ILIMIT 36 0.72 220 50 130 2.2 ID = 0.2 A VDS = 650 V, VC = 6.5 V ID = 1 mA, VC = 6.5 V VC = VC(CNT) − 0.2 V, VD = 5 V VC = VC(CNT) − 0.2 V, VD = 5 V (3 cm × 3 cm) Ta = 25°C 700 0.80 300 100 140 3.3 0.88 380 150 150 4.2 A ns ns °C V Ω µA V
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* ton(BLK) td(OCL) TOTP VC reset RDS(on) IDSS VDSS tr tf 8.0 10 10.0 250 200 50 90 ns ns °C/W
* Rth(j-a) )
*: 2 SLB00055AJD (1) (2) (3) (4) ( ) - ( ) (5) (6) (7) ) (8) ( IPD (1) (2.