MIP2K30MS - Panasonic

MIP2K30MS Silicon MOSFET

MIP2K30MS Silicon MOS FET type integrated circuit  Features  Built-in jitter function  Built-in charge protection circuit Built-in overheating, loadshorting and overvoltage protection circuits  Applications  Chargers (for DSC, etc.)  AC adapter  Absolute Maximum Ratings Ta = 25°C±3°C Parameter Symbol Rating Unit DRAIN voltage VD - 0.3 to +700 V.

Features

 Built-in jitter function
 Built-in charge protection circuit Built-in overheating, loadshorting and overvoltage protection circuits
 Applications
 Chargers (for DSC, etc.)
 AC adapter
 Absolute Maximum Ratings Ta = 25°C±3°C Parameter Symbol Rating Unit DRAIN voltage VD - 0.3 to +700 V VCC voltage VCC - 0.3 to +45 V VDD voltage VDD - 0.3 to +8 V Feedback voltage VFB - 0.3 to +8 V Feedback current IFB 500 mA CL pin voltage VCL - 0.3 to +8 V CL pin current ICL 150 mA Output peak current
* IDP 1.5 A Channel temperature Tch 150 °C Storage temperature Tstg -55 t.