ME4566-G - Matsuki

ME4566-G N- & P-Channel MOSFET

The ME4566 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power managemen.

Features

● RDS(ON)≦34mΩ@VGS=10V (N-Ch)
● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)
● RDS(ON)≦66mΩ@VGS=-10V (P-Ch)
● RDS(ON)≦86mΩ@VGS=-4.5V (P-Ch)
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL i.