ME4565A-G - Matsuki

ME4565A-G N- & P-Channel MOSFET

The ME4565A is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power managemen.

Features

RDS(ON) 26.5mΩ@VGS=10V (N-Ch) RDS(ON) 45mΩ@VGS=4.5V (N-Ch) RDS(ON) 44mΩ@VGS=-10V (P-Ch) RDS(ON) 60mΩ@VGS=-4.5V(P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch LCD Display inv.