ME4542D-G - Matsuki

ME4542D-G N- & P-Channel MOSFET

The ME4542D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power manageme.

Features

RDS(ON) mΩ@VGS=10V (N-Ch) RDS(ON) mΩ@VGS=4.5V (N-Ch) RDS(ON) mΩ@VGS=-10V (P-Ch) RDS(ON) mΩ@VGS=-4.5V (P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management DC/DC Converter LCD TV & Monitor Display inverter CCFL inverter LCD Display inverter e Ordering In.