The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. PIN CONFIGURATION FEATURES ● RDS(ON)≦22mΩ@VGS=10V ● RDS(ON)≦26mΩ@.
● RDS(ON)≦22mΩ@VGS=10V
● RDS(ON)≦26mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● DC/DC Converter
● Load Switch
● LCD/ LED Display inverter
(TO-252-3L) Top View
* The Ordering Information: ME35N10 (Pb-free) ME35N10-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
*
TC=25℃ TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
*
TC=25℃ TC=70℃
Operati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME35N10-G |
Matsuki |
N-Channel 100V (D-S) MOSFET | |
2 | ME35N06 |
Matsuki |
N-Channel 60V (D-S) MOSFET | |
3 | ME35N06-G |
Matsuki |
N-Channel 60V (D-S) MOSFET | |
4 | ME35N06F |
Matsuki |
N-Channel 60V (D-S) MOSFET | |
5 | ME35N06F-G |
Matsuki |
N-Channel 60V (D-S) MOSFET | |
6 | ME35N06P |
Matsuki |
N-Channel 60V (D-S) MOSFET | |
7 | ME35N06P-G |
Matsuki |
N-Channel 60V (D-S) MOSFET | |
8 | ME35N06T |
Matsuki |
N-Channel 60V (D-S) MOSFET | |
9 | ME35N06T-G |
Matsuki |
N-Channel 60V (D-S) MOSFET | |
10 | ME3500 |
Matsuki |
N- & P-Channel 30V (D-S) MOSFET | |
11 | ME3500-G |
Matsuki |
N- & P-Channel 30V (D-S) MOSFET | |
12 | ME3587 |
Matsuki |
N- & P-Channel 20V (D-S) MOSFET |