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ME35N10 |
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| Part Number | ME35N10 |
| Manufacturer | Matsuki |
| Description | The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
● RDS(ON)≦22mΩ@VGS=10V ● RDS(ON)≦26mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● DC/DC Converter ● Load Switch ● LCD/ LED Display inverter (TO-252-3L) Top View * The Ordering Information: ME35N10 (Pb-free) ME35N10-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation* TC=25℃ TC=70℃ Operati... |
| Document |
 ME35N10 Data Sheet
PDF 1.11MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ME35N10-G |
Matsuki |
N-Channel 100V (D-S) MOSFET |
|
| 2 | ME35N06 |
Matsuki |
N-Channel 60V (D-S) MOSFET |
|
| 3 | ME35N06-G |
Matsuki |
N-Channel 60V (D-S) MOSFET |
|
| 4 | ME35N06F |
Matsuki |
N-Channel 60V (D-S) MOSFET |
|
| 5 | ME35N06F-G |
Matsuki |
N-Channel 60V (D-S) MOSFET |
|