ME35N10-G - Matsuki

ME35N10-G N-Channel 100V (D-S) MOSFET

The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. PIN CONFIGURATION FEATURES ● RDS(ON)≦22mΩ@VGS=10V ● RDS(ON)≦26mΩ@.

Features

● RDS(ON)≦22mΩ@VGS=10V
● RDS(ON)≦26mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● DC/DC Converter
● Load Switch
● LCD/ LED Display inverter (TO-252-3L) Top View
* The Ordering Information: ME35N10 (Pb-free) ME35N10-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
* TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation
* TC=25℃ TC=70℃ Operati.