ME20N15-G - Matsuki

ME20N15-G N-Channel MOSFET

The ME20N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.

Features

● RDS(ON)≦90mΩ@VGS=10V
● RDS(ON)≦110mΩ@VGS=7V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● Load Switch
* Th Ordering Information: ME20N15 (Pb-free) ME20N15-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Ot.