The ME20P03F is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. PIN CONFIGURATION FEATURES ● RDS(ON)≦31.5mΩ@VGS=-10V ● RDS(ON)≦4.
● RDS(ON)≦31.5mΩ@VGS=-10V
● RDS(ON)≦44mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter
(TO-220F) Top View
* TheOrdering Information: ME20P03F (Pb-free)
ME4
ME20P03F-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
VDS -30
Gate-Source Voltage Continuous Drain Current
TC=25℃ TC=70℃
VGS ID
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME20P03 |
Matsuki |
P-Channel MOSFET | |
2 | ME20P03-G |
Matsuki |
P-Channel MOSFET | |
3 | ME20P03F-G |
Matsuki |
P-Channel MOSFET | |
4 | ME20P06 |
Matsuki |
P-Channel MOSFET | |
5 | ME20P06-G |
Matsuki |
P-Channel MOSFET | |
6 | ME20P06P |
Matsuki |
P-Channel MOSFET | |
7 | ME20P06P-G |
Matsuki |
P-Channel MOSFET | |
8 | ME200N04T |
Matsuki |
N-Channel MOSFET | |
9 | ME200N04T-G |
Matsuki |
N-Channel MOSFET | |
10 | ME20N03 |
Matsuki |
N-Channel Enhancement MOSFET | |
11 | ME20N10 |
Matsuki |
N-Channel 100V (D-S) MOSFET | |
12 | ME20N10-G |
Matsuki |
N-Channel 100V (D-S) MOSFET |