ME200N04T-G - Matsuki

ME200N04T-G N-Channel MOSFET

The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦3.5mΩ@VGS=10V ● RDS(ON)≦4.7mΩ@VGS=5V ● Super high density cell design for e.

Features

● RDS(ON)≦3.5mΩ@VGS=10V
● RDS(ON)≦4.7mΩ@VGS=5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● Load Switch e Ordering Information: ME200N04T (Pb-free) ME200N04T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current
* TC=25℃ TC=70℃ ID 189 158 A Pulsed Drain Current IDM 755 A Maximum Power Dissipatio.