MDY20N113PTRH - MagnaChip

MDY20N113PTRH Single N-channel Trench MOSFET

Magnachip Power Technology MDY20N113PTRH MDY20N113PTRH Single N-channel Trench MOSFET 200V 11.3mΩ 100A FEATURES • MV MOSFET GEN3T technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% UIS and Rg tested • Maximum 175°C junction temperature APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC Motor drive systems • Battery power.

Features

• MV MOSFET GEN3T technology
• N-channel, normal level
• Enhanced avalanche ruggedness
• 100% UIS and Rg tested
• Maximum 175°C junction temperature APPLICATIONS
• DC/DC and AC/DC converters
• Brushed and BLDC Motor drive systems
• Battery powered systems KEY PERFORMANCE PARAMETERS VDS RDS(on), typ. 200 0.0103 ID 100 QG 83 Junction temperature, max 175 V Ω A nC oC M2PAK-7P 1 7 Top View Bottom View D Tab Pin 1 G Driver Source Pin2 Pin 3-7 S ORDERING INFORMATION Type / Ordering Code Package MDY20N113PTRH M2PAK-7P http://www.magnachip.com/ Marking MDY20N113 Packing Tape &.