MDU1931VRH - MagnaChip

MDU1931VRH N-channel MOSFET

The MDU1931VRH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1931VRH is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.6mΩ @VGS = 10V  100% UI.

Features

 VDS = 80V  ID = 100A @VGS = 10V  RDS(ON) < 3.6mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D DD DD DD DD S SSG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC TA=25oC(3) Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TA=25oC(3) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Juncti.