MDU06N110 - MagnaChip

MDU06N110 N-Channel MOSFET

The MDU06N110 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU06N110 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 60V  ID = 52A @VGS = 10V  RDS(ON) < 11.0 mΩ @VGS = 10V  100% UIL Teste.

Features

 VDS = 60V  ID = 52A @VGS = 10V  RDS(ON) < 11.0 mΩ @VGS = 10V  100% UIL Tested DD DD DD DD D S SSG GS SS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Apr. 2015. Version 1.0 1 G S Symbol VDSS VGSS ID IDM PD EAS .