MDP5N50F - MagnaChip

MDP5N50F N-Channel MOSFET

The MDP5N50F/MDF5N50F use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP5N50F/MDF5N50F are suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 4.5A RDS(ON) ≤ 1.55Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast D G TO-.

Features

VDS = 500V ID = 4.5A RDS(ON) ≤ 1.55Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast D G TO-220 MDP Series TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt (3) (1) Symbol VDSS VGSS TC=25 C TC=100 C o o MDP5N50F 500 ±30 4.5 2.8 18 93 0.74 93 4.5 230 MDF5N50F Unit V V ID IDM 4.5
* 2.8
* 18
* 27 0.22 A A A W W/ oC mJ V/ns mJ o TC=25oC Derate above 25 oC PD EAR dv/dt EAS TJ, Tstg Single Pu.