MDP5N50B - MagnaChip

MDP5N50B N-Channel MOSFET

The MDP/F5N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F5N50B is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 5.0A RDS(ON) ≤ 1.4Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Rating.

Features

VDS = 500V ID = 5.0A RDS(ON) ≤ 1.4Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP5N50B MDF5N50B 500 ±30 5.0 5.0
* 3.2 3.2
* 20 20
* 93 27 0.74 .