These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 15A RDS(ON) ≤ 0.40Ω @ VGS = 10V @ VGS = 10V Applications.
VDS = 600V ID = 15A RDS(ON) ≤ 0.40Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
G
GDS
TO-220 MDP Series
G DS
TO-220F MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(2)
Power Dissipation
Repetitive Avalanche Energy(2) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Cha.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDP15N075 |
MagnaChip |
N-Channel MOSFET | |
2 | MDP15N075TH |
MagnaChip |
N-channel MOSFET | |
3 | MDP10N027 |
MagnaChip |
Single N-channel Trench MOSFET | |
4 | MDP10N027TH |
MagnaChip |
N-channel MOSFET | |
5 | MDP10N055 |
MagnaChip |
Single N-channel MOSFET | |
6 | MDP10N055 |
INCHANGE |
N-Channel MOSFET | |
7 | MDP10N055TH |
MagnaChip |
N-Channel MOSFET | |
8 | MDP10N50 |
MagnaChip |
N-Channel MOSFET | |
9 | MDP10N60G |
MagnaChip |
N-Channel MOSFET | |
10 | MDP10N60GTH |
INCHANGE |
N-Channel MOSFET | |
11 | MDP11N60 |
MagnaChip |
N-Channel MOSFET | |
12 | MDP12N50 |
MagnaChip |
N-Channel MOSFET |