isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconductor MDP14N25CTH ·AB.
·With TO-220 packaging
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·PFC stages
·LCD & PDP TV
·Power supply
·Switching applications
INCHANGE Semiconductor
MDP14N25CTH
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
250
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
14 8.8
56
PD
Total Dissipation
126.3
Tj
Operating Junction Temperature
-55~150
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDP14N25C |
MagnaChip |
N-Channel MOSFET | |
2 | MDP14N050TH |
MagnaChip |
N-channel MOSFET | |
3 | MDP14 |
Vishay Siliconix |
Thick Film Resistor Networks | |
4 | MDP1401 |
Vishay |
Thick Film Resistor Networks | |
5 | MDP1403 |
Vishay |
Thick Film Resistor Networks | |
6 | MDP1405 |
Vishay |
Thick Film Resistor Networks | |
7 | MDP10N027 |
MagnaChip |
Single N-channel Trench MOSFET | |
8 | MDP10N027TH |
MagnaChip |
N-channel MOSFET | |
9 | MDP10N055 |
MagnaChip |
Single N-channel MOSFET | |
10 | MDP10N055 |
INCHANGE |
N-Channel MOSFET | |
11 | MDP10N055TH |
MagnaChip |
N-Channel MOSFET | |
12 | MDP10N50 |
MagnaChip |
N-Channel MOSFET |