MDP14N25C - MagnaChip

MDP14N25C N-Channel MOSFET

The MDP14N25C is produced using advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 250V  ID = 14A  RDS(ON) ≤ 0.28Ω @ VGS = 10V @ VGS = 10V Applications  Power .

Features

 VDS = 250V  ID = 14A  RDS(ON) ≤ 0.28Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  Motor Control  High Current, High Speed Switching D Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, .