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Features The MDE1932 uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. VD.
The MDE1932 uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. VDS = 80V ID = 120A @VGS = 10V RDS(ON) < 3.4 mΩ @VGS = 10V 100% UIL Tested D D G S TO-263 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (3) TC=25o.
MDE1932 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistan.
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|---|---|---|---|---|
| 1 | MDE1991 |
MagnaChip |
N-Channel MOSFET |
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| 2 | MDE1991RH |
MagnaChip |
N-channel MOSFET |
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| 3 | MDE10N026RH |
MagnaChip |
Single N-channel MOSFET |
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| 4 | MDE1752 |
MagnaChip |
N-Channel Trench MOSFET |
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| 5 | MDE-14D101K |
MDE Semiconductor |
Metal Oxide Varistors |
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| 6 | MDE-14D102K |
MDE Semiconductor |
Metal Oxide Varistors |
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| 7 | MDE-14D112K |
MDE Semiconductor |
Metal Oxide Varistors |
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| 8 | MDE-14D121K |
MDE Semiconductor |
Metal Oxide Varistors |
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| 9 | MDE-14D151K |
MDE Semiconductor |
Metal Oxide Varistors |
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| 10 | MDE-14D180M |
MDE Semiconductor |
Metal Oxide Varistors |
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| 11 | MDE-14D181K |
MDE Semiconductor |
Metal Oxide Varistors |
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| 12 | MDE-14D182K |
MDE Semiconductor |
Metal Oxide Varistors |
|