MDE1752 - MagnaChip

MDE1752 N-Channel Trench MOSFET

The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features VDS = 40V ID = 66A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V Applications Inverters General purpo.

Features

VDS = 40V ID = 66A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V Applications Inverters General purpose applications D G S Absolute Maximum Ratings (TC =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Characteristics (Note 2) Power Dissipation for Single Operation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25oC TC=25oC TA=25oC (Note 3) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, .