MDE1932 |
Part Number | MDE1932 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t... |
Features |
·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor MDE1932 ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 175 110 480 PD Total Dissipation 209 Tj Operating Junction Temperature 150 Tstg ... |
Document |
MDE1932 Data Sheet
PDF 200.26KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | MDE1932 |
MagnaChip |
N-Channel MOSFET | |
2 | MDE1991 |
MagnaChip |
N-Channel MOSFET | |
3 | MDE1991RH |
MagnaChip |
N-channel MOSFET | |
4 | MDE10N026RH |
MagnaChip |
Single N-channel MOSFET | |
5 | MDE1752 |
MagnaChip |
N-Channel Trench MOSFET |