MBRS260T3G - ON Semiconductor

MBRS260T3G Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplie.

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Over−Voltage Protection
• Low Forward Voltage Drop
• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
*
• These are Pb−Free Devices Mechanical Characteristics
• Case: Molded Epo.